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ts 1003 page 1 ? 2013 touchstone semiconductor, inc. all rights reserved. fe at u re s single 0.8v to 5.5v operation supply current: 0.6a (typ) input bias current: 2pa (typ) low tcv os : 9 v/c (typ) a vol driving 100k ? load: 90db (min) gain - bandwidth product: 4khz unity gain stable rail - to - rail input and output no output phase reversal 5 - pin sc70 package applications battery/solar - powered instrumentation portable gas monitors low - voltage signal processing micro power active filters wireless remote sensors battery - powered industrial sensors active rfid readers powerline or battery current sensing handheld/portable pos terminals description the TS1003 is the industrys first sub - 1a supply current, precision cmos operational amplifier fully specified to operate over a supply voltage range from 0.8v to 5.5v . fully specified at 1.8v, the TS1003 is optimized for ultra - long - life battery powered applications. t he TS1003 is touchstones fourth operational amplifier in the nanowatt analog? high - performance analog integrated circuits portfolio. the TS1003 exhibits a typical input bias current of 2pa, and rail - to - rail input and output stages. the TS1003 s combined features make it an excellent choice in applications where very low supply current and low operating supply voltage translate into very long equipment operating time. applications include: micro power active filters, wireless remote sensor s, battery and powerline current sensors, portable gas monitors, and handheld/portable pos terminals. th e TS1003 is fully specified over the industrial temperature range ( ?40c to +85c) and is available in a pcb - space saving 5 - lead package. percent of units - % 0% 5% 10% 15% 20 % 25% 30% 35% supply current distribution the only 0.8v to 5.5 v, 0.6 a rail - to - rail single op amp typical application circuit a micro watt 2 - pole sallen key low pass filter patent(s) pending nanowatt analog and the touchstone semicondu c tor logo are registered trademarks of touchstone semiconductor, incorporated. 0. 48 0.5 3 0. 58 0.6 3 supply current - a v dd = 1.8v http://www..net/ datasheet pdf - http://www..net/
ts 1003 page 2 TS1003ds r1p0 rtfds absolute maximum rat ings total supply voltage (v dd to v ss ) .............................. +6.0v voltage inputs (in+, in -) ........... (v ss - 0.3v) to (v dd + 0.3v) differential input voltage ............................................ 6 . 0 v input current (in+, in -) .............................................. 20 ma output short - circuit duration to gnd .................... indefinite continuous power diss ipation (t a = +70c) 5 - pin sc70 (derate 3.87mw/c above +70c) .... 310 mw operating temperature range .................... - 40c to +85c junction temperature .............................................. +150c storage temperature range ..................... - 65c to +150c lead temperature (soldering, 10s) ............................. +300 electrical and thermal s tresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only and functional operation of the device at these or any other condition beyond thos e indicated in the operational sections of the specifications is not implied. exposure to any absolute maximum rating conditions for extended periods may affect device reliability and lifetime . package/ordering information tape & reel order number part marking package quantity ts100 3ij5tp tah --- ts100 3ij5t 3000 lead - free program: touchstone semiconductor supplies only lead - free packaging . consult touchstone semiconductor for products specified with wider operating temperature ranges. http://www..net/ datasheet pdf - http://www..net/
TS1003 TS1003ds r1p0 page 3 rtfds electrical character istics v dd = + 1.8 v, v ss = 0v, v incm = v ss ; r l = 100k ? to (v dd - v ss )/2; t a = - 40c to +85c, unless otherwise noted. typical values are at t a = +25c. see note 1 parameters symbol conditions min typ max units supply voltage range v dd - v ss 0. 8 5.5 v supply current i sy r l = open circuit t a = 25 c 0. 6 0.8 a - 40 c t a 85 c 1 input offset voltage v os v in = v ss or v dd t a = 25 c 0.8 3 mv - 40 c t a 85 c 5 input offset voltage drift tcv os 9 v/ c input bias current i in+ , i in - v in+ , v in - = (v dd - v ss )/2 t a = 25 c 2 p a - 40 c t a 85 c 1 00 input offset current i os specified as i in+ - i in - v in+ , v in - = (v dd - v ss )/2 t a = 25 c 2 p a - 40 c t a 85 c 50 input voltage range ivr guaranteed by input offset voltage test v ss v dd v common - mode rejection ratio cmrr vdd=5.5v; 0v v in(cm) 5.0v t a = 25 c 70 90 db - 40 c t a 85 c 68 power supply rejection ratio psrr 0. 8 v (v dd - v ss ) 5 .5v t a = 25 c 70 90 db - 40 c t a 85 c 67 output voltage high v oh specified as v dd - v out , r l = 100k ? to v ss t a = 25 c 3 .7 mv - 40 c t a 85 c 6 specified as v dd - v out , r l = 10k ? to v ss t a = 25 c 3 0 - 40 c t a 85 c 60 output voltage low v ol specified as v out - v ss , r l = 100k ? to v dd t a = 25 c 1 .5 mv - 40 c t a 85 c 6 specified as v out - v ss , r l = 10k ? to v dd t a = 25 c 1 5 - 40 c t a 85 c 30 short - circuit current i sc+ v out = v ss t a = 25 c 4 ma - 40 c t a 85 c 2 i sc - v out = v dd t a = 25 c 1 5 - 40 c t a 85 c 7 open - loop voltage gain a vol v ss +50mv v out v dd - 50mv t a = 25 c 9 1 110 db - 40 c t a 85 c 8 4 gain - bandwidth product gbwp r l = 10 0k ? to v ss , c l = 20pf 4 khz phase margin m unity - gain crossover, r l = 100k ? to v ss , c l = 20pf 70 d egrees slew rate sr r l = 100k ? to v ss , a vcl = +1v/v 1.5 v/ m s full - power bandwidth fpbw fpbw = sr/( ? v out,p p ) ; v out,pp = 0.7v pp 6 80 hz input voltage noise density e n f = 1khz 0.6 v/ hz input current noise density i n f = 1khz 10 pa/ hz note 1: all specifications are 100% tested at t a = +25c. specification limits over temperature (t a = t min to t max ) are g uaranteed by device characterization , not production tested. http://www..net/ datasheet pdf - http://www..net/
ts 1003 page 4 TS1003ds r1p0 rtfds typical performance characteristics supply current vs supply voltage supply curent - a supply voltage - volt supply current vs input common - mode voltage supply curent - a input common - mode voltage - volt supply current vs input common - mode voltage input offset voltage vs input common - mode voltage input offset voltage - mv input offset voltage - mv input common - mode voltage - volt input offset voltage vs supply voltage input common - mode voltage - volt supply curent - a supply voltage - volt v dd =1.8v t a = +25 c input offset voltage vs input common - mode voltage input offset voltage - mv input common - mode voltage - volt v dd = 5.5v t a = +25 c +25c +8 5c - 40 c 0.5 0.55 0.6 0.65 0.7 0.75 v dd =1.8v t a = +25 c 0.65 0.61 0.57 0.55 0 0.6 1.8 v dd =5.5v t a = +25 c 0.625 0.605 0.565 0.525 0 3.3 4.4 5.5 1.1 t a = +25 c 0.8 3.1 4.7 5.5 1.6 v incm = v dd 0.6 0.4 0.2 - 0.6 0 v incm = 0v 0 0.3 0.9 1.2 1.8 0.6 0.3 0 - 0.3 0.6 0.3 - 0.6 - 0.3 0 1.6 3.1 4.7 5.5 2.3 2.4 3.9 0.8 5.5 1.6 3.1 4.7 0.59 0.63 1.2 0.585 0.545 2.2 - 0.2 - 0.4 2.4 3.9 1.5 0.6 - 0.6 0.8 3.9 0 http://www..net/ datasheet pdf - http://www..net/
TS1003 TS1003 r1p0 page 5 rtfds - 40 typical performance characteristics input bias current (i in+ , i in - ) vs input common - mode voltage input bias current - pa input common - mode voltage - volt output voltage high (v oh ) vs temperature, r load =100k ? temperature - c output voltage low (v ol ) vs temperature, r load =100k ? temperature - c output voltage high (v oh ) vs temperature, r load =10k ? output voltage low (v ol ) vs temperature, r load =10k ? input bias current (i in + , i in - ) vs input common - mode voltage output saturation voltage - mv input common - mode voltage - volt input bias current - pa output saturation voltage - mv v dd = 5.5v v dd =1.8v 0 0.6 1.2 1.8 0 1.1 3.3 4.5 5.5 2.2 6 - 6 - 4 4 30 20 - 30 - 20 10 r l = 100k ? v dd = 1.8v v dd = 5.5v r l = 100k ? v dd = 1.8v v dd = 5.5v 12 4 2 10 6 8 5 0 2 4 3 +25 +85 - 40 +25 +85 80 20 40 100 120 60 output saturation voltage - mv output saturation voltage - mv temperature - c temperature - c - 40 +25 +85 - 40 +25 +85 r l = 10k ? v dd = 1.8v v dd = 5.5v r l = 10k ? v dd = 1.8v v dd = 5.5v 40 20 10 30 50 2 t a = +25 c t a = +85 c - 2 0 t a = +25 c t a = +85 c - 10 0 http://www..net/ datasheet pdf - http://www..net/
ts 1003 page 6 TS1003ds r1p0 rtfds v out(n) - 100 v /div 0.1hz to 10hz output voltage noise typical performance characteristics output short circuit current, i sc + vs temperature output short - circuit current - ma output short circuit current, i sc - vs temperature large - signal transient response v dd = 5.5v, v ss = gnd, r load = 100k ? , c load = 15pf 200 s/div output short - circuit current - ma input small - signal transient response v dd = 5.5v, v ss = gnd, r load = 100k ? , c load = 15pf 2ms/div output input output temperature - c temperature - c - 40 +25 +85 - 40 +25 +85 v dd = 1.8v v dd = 5.5v v dd = 1.8v v dd = 5.5v v out = 0v v out = v dd 6.5 2.5 3.8 5.2 12.5 8 17 26 1 second/div 100 v pp vdd = 1.8v t a = +25 c r l = 100k c l = 20pf a vcl = 1000v/v 21.5 gain and phase vs. frequency gain - db frequency - hz phase - degrees 10 1k 10k 100 50 - 10 0 10 60 85 10 35 60 100k phase gain 4khz 70 40 30 20 http://www..net/ datasheet pdf - http://www..net/
TS1003 TS1003ds r1p0 page 7 rtfds pin functions pin label function 1 out amplifier output. 2 v ss negative supply or analog gnd. if applying a negative voltage to this pin, connect a 0.1f capacitor from this pin to analog gnd. 3 +in amplifier non - inverting input. 4 - in amplifier inverting input. 5 v dd positive supply connection. connect a 0.1f bypass capacitor from this pin to analog gnd. theory of operation the TS1003 is fully functional for an input signal from the negative supply (v ss or gnd) to the positive supply (v dd ). the input stage consists of two differential amplifiers, a p - channel cmos stage and an n- channel cmos stage that are active over different ranges of the input common mode voltage. the p - channel input pair is active for input common mode voltages, v incm , between the negative supply to approximately 0.4 v below the positive supply. as the common - mode input voltage moves closer to wards v dd , an internal current mirror activat es the n - channel input pair differential pair. the p - channel input pair becomes inactive for the balance of the input common mode voltage range up to the positive supply. because both input stages have their own offset voltage (v os ) characteristic, the offset voltage of the TS1003 is a function of the applied input common - mode voltage, v incm . the v os has a crossover point at ~ 0.4v from v dd (refer to the v os vs. v cm curve in the typical operating characteristics section). caution should be taken in applications where the input signal ampli tude is comparable to the TS1003 s v os value and/or the design requires high accuracy. in these situations, it is necessary for th e input signal to avoid the crossover point. in addition, amplifier parameters such as psrr and cmrr which involve the input offset voltage will also be affected by changes in the input common - mode voltage across the differential pair transition region. t he second stage is a folded - cascode transistor arrangement that converts the input stage differential signals into a single - ended output. a complementary drive generator supplies current to the output transistors that swing rail to rail. the TS1003 output stages voltage swings within 3.7 mv from the rails at 1 .8v supply when driving an output load of 100k - which provides the maximum possible dynamic range at the output. this is particularly important when operating on low supply voltages. when driving a stiffer 10k load, the TS1003 swings within 3 0 mv of v dd and within 1 3 mv of v ss or gnd. applications informa tion portable gas detection sensor amplifier gas sensors are used in many different industrial and medical applications. gas sensors generate a current that is proportional to the percentage of a particular gas concentration sensed in an air sample. this output current flows through a load resistor a nd the resultant voltage drop is amplified. depending on the sensed gas and sensitivity of the sensor, the output current can be in the range of tens of microamperes to a few milliamperes. gas sensor datasheets often specify a recommended load resistor val ue or a range of load resistors from which to choose. there are two main applications for oxygen sensors C applications which sense oxygen when it is abundantly present (that is, in air or near an oxygen tank) and those which detect traces of oxygen in pa rts - per - million concentration. in medical applications, oxygen sensors are used when air quality or oxygen delivered to a patient needs to be monitored. in fresh air, the concentration of oxygen is 20.9% and air samples containing less than 18% oxygen are considered dangerous. in industrial applications, oxygen sensors are used to detect the absence of oxygen; for example, vacuum - packaging of food products is one example. http://www..net/ datasheet pdf - http://www..net/
ts 1003 page 8 TS1003ds r1p0 rtfds the circuit in figure 1 illustrates a typical implementation used to amplify the output o f an oxygen detector. the TS1003 makes an excellent choice for this application as it only draws 0.6 a of supply current and operates on supply voltages down to 0. 8 v. with the components shown in the figure, the circuit consumes less than 0.7 a of supply current ensuring that small form - factor single - or button - cell batteries (exhibiting low mah charge ratings) could last beyond the operating life of the oxygen sensor. the precis ion specifications of the TS1003 , such as its low offset voltage, low tcv os , low input bias current, high cmrr, and high psrr are oth er factors which make the TS1003 an excellent choice for this application. since oxygen sensors typically exhibi t an operating life of one to two years, an oxygen sensor amplifier built around a TS1003 can operate from a conventionally - available single 1.5 - v alkaline aa battery for over 290 years! at such low power consumption from a single cell, the oxygen sensor c ould be replaced over 150 times before the battery requires replacing! micro watt, buffered single - pole low - pass filters when receiving low - level signals, limiting the bandwidth of the incoming signals into the system is often required. as shown in figure 2 , the simplest way to achieve this objective is to use an rc filter at the non inverting terminal of the TS1003 . if additional attenuation is needed, a two - pole sallen - key filter can be used to provide the additional attenuation as shown in figure 3 . for best results, the filter s cutoff frequency should be 8 t o 10 times lower than the TS1003 s crossover frequency. additional operational amplifier phase margin shift can be avoided if the amplifier bandwidth - to - signal bandwidth ratio is greater than 8. the design equations for the 2 - pole sallen - key low - pass filter are given below with component values selected to set a 4 00hz low - pass filter cutoff frequency : r1 = r2 = r = 1m ? c1 = c2 = c = 4 00pf q = filter peaking factor = 1 f C 3db = 1/(2 x x rc) = 4 00 hz r 3 = r 4 /(2 - 1/q) ; with q = 1, r3 = r4. a single +1.5 v supply, two op amp instrumentation amplifier the TS1003 s ultra - low supply current and ultra - low voltage operation make it ideal for battery - powered applications such as the instrumentation amplifier shown in figure 4 . the circuit utilizes the classic two op amp instrumentation amplifier topology with four r esistors to set the gain. the equation is simply that of a figure 2 : a simple, sing le - pole active low - pass filter. figure 3 : a micro power 2 - p ole sallen - key low - pass filter. figure 4 : a two op amp instrumentation amplifier. figure 1 : a micr opower, precision oxygen gas sensor amplifier . http://www..net/ datasheet pdf - http://www..net/
TS1003 TS1003ds r1p0 page 9 rtfds noninverting amplifier as shown in the figure. the two resistors labeled r1 should be closely matched to each other as well as both resistors labeled r2 to ensure acceptable common - mode rejection p erformance. resistor networks ensure the closest matching as well as matched drifts for good temperature stability. capacitor c1 is included to limit the bandwidth and, therefore, the noise in sensitive applications. the value of this capacitor should be adjusted depending on the desired closed - loop bandwidth of the instrumentation amplifier. the rc combination creates a pole at a frequency equal to 1/ (2 r1c1). if the ac - cmrr is critical, then a matched capacitor to c1 should be included across the second resistor labeled r1. because the TS1003 accepts rail - to - rail inputs, the input common mode range includes both ground and the positive supply of 1.5v. furthermore, the rail - to - rail output range ensures the widest signal range possible and maximizes the dynamic range of the system. also, with its low supply current of 0.6 a, this circuit consumes a quiescent current of only ~1.3 a, yet it still exhibits a 1 - khz bandwidth at a circuit gain of 2. driving capacitive loads while the TS1003 s internal gain - bandwidth product is 4khz, it is capable of driving capacitive loads up to 50 pf in voltage follower configurations without any additional components . in many applications, however, an operational amplifier is required to driv e much larger capacitive loads. the amplifiers output impedance and a l arge capacitive load create additional phase lag that further reduces the amplifiers phase margin. if enough phase delay is introduced, the amplifiers phase margin is reduced. the effect is quite evident when the transient response is observed as there will appear noticeable peakin g/ringing in the output transient response. if the TS1003 is used in an a pplication that require s driving larger capacitive loads , an isolation resistor between the output and the capacitive lo ad should be used as illustrated in figure 5 . table 1 illustrates a range of r iso values as a function of the external c load on the output of the TS1003 . the power s upply voltage used on the TS1003 at which these resistor values were determined empirically was 1.8v. the oscilloscope capture shown in figure 6 illustrates a typical transient response obtained with a c load = 1 00pf and an r iso = 12 0k ?. note that as c load is increased a smaller r iso is needed for optimal transient response . in the event that an external r load in parallel with c load appears in the application, the use of an r iso results in gain accuracy loss because the external series r iso forms a voltage - divider with the external load resistor r load . external capacitive load, c load external output isolation resistor, r iso 0 - 50pf n ot required 100pf 120k 500pf 50k 1nf 33k 5nf 18k 10nf 13k figure 5 : using an external resistor to isolate a c load from the TS1003s output v in v out http://www..net/ datasheet pdf - http://www..net/
ts 1003 page 10 TS1003ds r1p0 rtfds configuring the TS1003 as micro watt analog comparator although optimized for use as an o perational amplifier, the TS1003 can also be used as a rail - to - rail i/o comparator as illustrated in figure 7 . external hysteresis can be employed to minimize the risk of output o scillation. the positive feedback circuit causes the input threshold to change when the output voltage changes state. the diagram in figure 8 illustrates the TS1003 s analog comparator hysteresis band and output transfer characteristic. the design of an an alog comparator using the TS1003 is straightforward. in this application, a 1.5 - v power supply (v dd ) was used and the resistor divider network formed by rd1 and rd2 generate d a convenient reference voltage (v ref ) for the circuit at ? the supply voltage, or 0.75v, while keeping the current drawn by this resistor divider low. capacitor c1 is used to filter any extraneous noise t hat could couple into the TS1003 s inverting input. in this application, the desired hysteresis band was set to 100mv (v hyb ) with a desired high trip - point (v hi ) set at 1v and a desired low trip - point (v lo ) set at 0.9v. since the TS1003 is a very low supply current amplifier (0.6a, typical), it is desired that the design of an analog comparator using the TS1003 should also use as l ittle current as practical. the first step in the design, therefore, was to set the feedback resistor r3: r3 = 10m ? calculating a value for r1 is given by the following expression : r1 = r3 x (v hyb /v dd ) substituting v hyb = 100mv, v dd = 1.5v, and r3 = 10m ? into the equation above yields: r1 = 667k ? the following expression was then used to calculate a value for r2: r2 = 1/[v hi /(v ref x r1) C (1/r1) C (1/r3)] substituting v hi = 1v, v ref = 0.75v, r1 = 667 k ?, and r3 = 10m ? into the abo ve expression yields: r2 = 2.5m ? printed circuit board layout considerations even though the TS1003 operates from a single 0. 8 v to 5 .5v power supply and consumes very little supply current, it is always good engineering practice to bypass the power supplies with a 0.1f ceramic capacitor placed in close proximity to the v dd and v ss (or gnd) pins. good pcb layout techniques and analog ground plane management improve the performance of any analog circuit by decreasing the amount of stray capacitance t hat could be introduced at the op amp's inputs and outputs. excess stray capacitance can easily couple noise into the input leads of the op amp and excess stray capacitance at the output will add to any external capacitive load. therefore, pc board trace l engths and external component leads should be kept a short a s practical to any of the TS1003 s package pins. second, it is also good engineering practice to route/remove any analog ground plane from the inputs a nd the output pins of the TS1003 . figure 8 : analog comparator hysteresis band and output switching points. figure 7 : a micro watt analog comparator with user - programmable hysteresis. http://www..net/ datasheet pdf - http://www..net/
TS1003 touchstone semiconductor, inc. page 11 630 alder drive, milpitas, ca 95035 TS1003ds r1p0 +1 (408) 215 - 1220 ? www.touchstonesemi.com rt f ds package outline draw ing 5- pin sc70 package outline drawing (n.b., drawings are not to scale) 1 3 4 5 0.65 typ. 2 1.30 typ. 0.15 - 0.30 1.80 - 2.20 1.15 - 1.35 0.26 - 0.46 0.275 - 0.575 2 1 lead frame thickness gauge plane 1 2 notes: does not include mold flash, protrusions or gate burrs. does not include inter-lead flash or protrusions. die is facing up for molding. die is facing down for trim/form. 3. 5. controlling dimensions in milimiters. all side 1.80 - 2. 40 0.00 - 0.10 1.00 max 0.10 - 0.18 0.15 typ. 8o - 12o 0o - 8o 0.800 C 0.925 0.40 C 0.55 4 all specification comply to jedec spec mo-203 aa 6. all specifications refer to jedec mo-203 aa 7. lead span/stand off height/coplanarity are considered as special characteristic 0.10 max information furnished by touchstone semiconductor is believed to be accurate and reliable. however, touchstone semiconductor does not assume any responsibility for its use nor for any infringements of patents or other rights of third parties that may result f rom its use , and all information provided by touch stone semiconductor and its suppliers is provided on an as is basis, without warranty of any kind . touchstone semiconductor reserves the right to change product specifications and product descriptions at any time without any advance notice. no license is g ranted by implication or otherwise under any patent or patent rights of touchstone semiconductor. touchstone semiconductor assumes no liability for applications assistance or customer product design. customers are responsible for thei r products and applica tions using touchstone semiconductor components. to minimize the risk associated with customer products and applications, customers should provide adequate design and operating safeguards. trademarks and registered trademarks are the property of t heir resp ective owners. http://www..net/ datasheet pdf - http://www..net/

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